DocumentCode
2803141
Title
GaAs P-HEMT MMICs for K-to-Ka band wireless communications
Author
Ishikawa, Takahide ; Ishida, Takao ; Komaru, Makio ; Chaki, Shin ; Fujimoto, Shinichi ; Katoh, Takayuki
Author_Institution
High Frequency & Opt. Semicond. Div., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1999
fDate
1999
Firstpage
10.1
Lastpage
10.5
Abstract
This paper describes pseudomorphic HEMT-based MMIC for K- to Ka-band applications for use in wireless communications such as LMDS. A developed LNA exhibits a low noise figure of 1.4 dB and an HPA provides a 31.6 dBm output power at 30 GHz and another HPA 24.6 dBm at 40 GHz. Each chip is miniaturized in size by methods including electromagnetic simulation and a lumped element designing approach
Keywords
HEMT integrated circuits; digital radio; field effect MIMIC; gallium arsenide; lumped parameter networks; millimetre wave amplifiers; radio access networks; satellite communication; transceivers; 1.4 dB; 30 GHz; 40 GHz; GaAs; HPA; K band; Ka band; LMDS; LNA; P-HEMT MMIC; electromagnetic simulation; lumped element design; pseudomorphic HEMT; satellite transceiver; wireless communications; Circuit noise; Costs; Filters; Gallium arsenide; Inductance; MMICs; Noise figure; Performance gain; Radio frequency; Semiconductor device noise;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Communications and Systems, 2000. 1999 Emerging Technologies Symposium
Conference_Location
Richardson, TX
Print_ISBN
0-7803-5554-7
Type
conf
DOI
10.1109/ETWCS.1999.897324
Filename
897324
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