DocumentCode
2803877
Title
The measured and predicted noise figure of a GaAs heterojunction bipolar transistor mixer
Author
Xavier, B.A. ; Aitchison, C.S.
fYear
1997
fDate
10-10 June 1997
Firstpage
135
Lastpage
138
Abstract
An analytical technique is developed to predict the noise performance of the GaAs Heterojunction Bipolar transistor (HBT) mixer. The measured versus modelled data shows good agreement. The measured noise figure of the HBT mixer is 15.7 dB with an associated conversion gain of +13 dB (RF=950 MHz IF=50 MHz).
Keywords
III-V semiconductors; UHF mixers; bipolar transistor circuits; circuit noise; gallium arsenide; heterojunction bipolar transistors; 13 dB; 15.7 dB; 50 MHz; 950 MHz; GaAs; III-V semiconductors; UHF mixers; conversion gain; heterojunction bipolar transistor mixer; noise figure; noise performance; 1f noise; Circuit noise; Frequency; Gallium arsenide; Heterojunction bipolar transistors; MESFETs; Mixers; Noise figure; Noise measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location
Denver, CO, USA
Print_ISBN
0-7803-4063-9
Type
conf
DOI
10.1109/RFIC.1997.598760
Filename
598760
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