Parameter extraction of nano-scale MOSFETs using modified Y function method

This paper presents a new modified Y function method for parameter extraction of nano scale MOSFETs, taking into account the gate voltage dependent source-drain series resistance R_SD in the linear operation regime. Two approaches have been considered. The first one explores Y function without any prior assumption on R_SD(V_g) while the second one assumes a linear R_SD(V_g) for simpler extraction. Both methods were applied to real devices and successfully extracted the parameters.