Title :
Fusion bonding for vertical cavity surface-emitting lasers
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
Summary form only given. This talk summarizes current efforts in fusion bonding and the application of this technology to vertical-cavity surface-emitting lasers at Hewlett-Packard laboratories. We discuss electrical characteristics, carrier-concentration profiling and SIMS analyses through InP/GaAs junctions, and the development of 1300 nm VCSELs.
Keywords :
III-V semiconductors; carrier density; gallium arsenide; indium compounds; optical fabrication; secondary ion mass spectra; semiconductor lasers; surface emitting lasers; wafer bonding; 1300 nm; InP-GaAs; InP/GaAs junctions; SIMS analyses; carrier-concentration profiling; electrical characteristics; fusion bonding; vertical cavity surface-emitting lasers; Bonding; Filters; Gallium arsenide; Insertion loss; Laser fusion; Mirrors; Surface emitting lasers; Tunable circuits and devices; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
Conference_Titel :
Optical Fiber Communication Conference and Exhibit, 1998. OFC '98., Technical Digest
Conference_Location :
San Jose, CA, USA
Print_ISBN :
1-55752-521-8
DOI :
10.1109/OFC.1998.657158
