DocumentCode
2804245
Title
Fusion bonding for vertical cavity surface-emitting lasers
Author
Babic, Dubravko
Author_Institution
Hewlett-Packard Co., Palo Alto, CA, USA
fYear
1998
fDate
22-27 Feb. 1998
Firstpage
8
Lastpage
9
Abstract
Summary form only given. This talk summarizes current efforts in fusion bonding and the application of this technology to vertical-cavity surface-emitting lasers at Hewlett-Packard laboratories. We discuss electrical characteristics, carrier-concentration profiling and SIMS analyses through InP/GaAs junctions, and the development of 1300 nm VCSELs.
Keywords
III-V semiconductors; carrier density; gallium arsenide; indium compounds; optical fabrication; secondary ion mass spectra; semiconductor lasers; surface emitting lasers; wafer bonding; 1300 nm; InP-GaAs; InP/GaAs junctions; SIMS analyses; carrier-concentration profiling; electrical characteristics; fusion bonding; vertical cavity surface-emitting lasers; Bonding; Filters; Gallium arsenide; Insertion loss; Laser fusion; Mirrors; Surface emitting lasers; Tunable circuits and devices; Vertical cavity surface emitting lasers; Wavelength division multiplexing;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exhibit, 1998. OFC '98., Technical Digest
Conference_Location
San Jose, CA, USA
Print_ISBN
1-55752-521-8
Type
conf
DOI
10.1109/OFC.1998.657158
Filename
657158
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