Title :
Optimized oxygen annealing process for Vth tuning of p-MOSFET with high-k/metal gate stacks
Author :
Kawanago, T. ; Lee, Y. ; Kakushima, K. ; Ahmet, P. ; Tsutsui, K. ; Nishiyama, A. ; Sugii, N. ; Natori, K. ; Hattori, T. ; Iwai, H.
Author_Institution :
Frontier Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
A demonstration of VFB/Vth tuning has been conducted by optimized annealing in oxygen ambient for direct contact of high-k with Si gate stacks. The amount of oxygen atoms has been controlled by optimized annealing temperature and the thickness of the gate electrode. The shift in VFB has been confirmed irrespective of gate dielectric materials and the thickness. The Vth of pMOSFET can be controlled to positive direction by 520 mV without any EOT penalty. Once a shift in VFB/Vth is obtained, the values are found to be stable even after following forming gas annealing.
Keywords :
MOSFET; annealing; elemental semiconductors; silicon; tuning; EOT penalty; VFB tuning; Vth tuning; direct contact; forming gas annealing; gate dielectric materials; gate electrode; high-k/metal gate stacks; optimized annealing temperature; optimized oxygen annealing process; oxygen ambient; oxygen atoms; p-MOSFET; silicon gate stacks; Annealing; Capacitance-voltage characteristics; Electrodes; High K dielectric materials; Logic gates; MOSFET circuits; Metals;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618352
