DocumentCode
2804310
Title
Experimental analysis of surface roughness scattering in FinFET devices
Author
Lee, Jae Woo ; Jang, Doyoung ; Mouis, Mireille ; Kim, Gyu Tae ; Chiarella, Thomas ; Hoffmann, Thomas ; Ghibaudo, Gérard
Author_Institution
IMEP-LAHC, INPG/MINATEC, Grenoble, France
fYear
2010
fDate
14-16 Sept. 2010
Firstpage
305
Lastpage
308
Abstract
The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.
Keywords
MOSFET; surface roughness; mobility measurements; n-type FinFET devices; second order mobility degradation factor; surface roughness scattering; top-side wall current separation technique; FinFETs; Logic gates; Rough surfaces; Scattering; Strontium; Surface roughness; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location
Sevilla
ISSN
1930-8876
Print_ISBN
978-1-4244-6658-0
Type
conf
DOI
10.1109/ESSDERC.2010.5618353
Filename
5618353
Link To Document