Title :
Experimental analysis of surface roughness scattering in FinFET devices
Author :
Lee, Jae Woo ; Jang, Doyoung ; Mouis, Mireille ; Kim, Gyu Tae ; Chiarella, Thomas ; Hoffmann, Thomas ; Ghibaudo, Gérard
Author_Institution :
IMEP-LAHC, INPG/MINATEC, Grenoble, France
Abstract :
The surface roughness scattering in n-type FinFET devices is accurately analyzed based on mobility measurements at low temperatures. Using the top/side wall current separation technique, the effective mobility for each surface has been extracted. Considering the second order mobility degradation factor, the surface roughness scattering of top and sidewall conduction has been quantitatively compared.
Keywords :
MOSFET; surface roughness; mobility measurements; n-type FinFET devices; second order mobility degradation factor; surface roughness scattering; top-side wall current separation technique; FinFETs; Logic gates; Rough surfaces; Scattering; Strontium; Surface roughness; Temperature measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618353
