Title :
Strained MOSFETs on ordered SiGe dots
Author :
Cervenka, Johann ; Kosina, Hans ; Selberherr, Siegfried ; Zhang, Jianjun ; Hrauda, Nina ; Stangl, Julian ; Bauer, Guenther ; Vastola, Guglielmo ; Marzegalli, Anna ; Miglio, Leo
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
The potential of strained DOTFET technology is demonstrated. This technology uses a SiGe island as a stressor for a Si capping layer, into which the transistor channel is integrated. The structure information is extracted from AFM measurements of fabricated samples. Strain on the upper surface of a 30 nm thick Si layer is in the range of 0.7%, as supported by finite element calculations. The Ge content in the SiGe island is 30% on average, showing an increase towards the top of the island. Based on realistic structure information, three-dimensional strain profiles are calculated and device simulations are performed. Up to 15% enhancement of the NMOS saturation current is predicted.
Keywords :
Ge-Si alloys; MOSFET; finite element analysis; semiconductor materials; semiconductor quantum dots; AFM measurement; DOTFET technology; NMOS saturation current; Si capping layer; SiGe; SiGe dots; finite element calculation; strained MOSFET; three-dimensional strain profile; Logic gates; Semiconductor process modeling; Silicon; Silicon germanium; Strain; Substrates; Surface treatment;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618356
