Microwave frequency operation of a low-voltage InGaAs/InP multiple-quantum-well reflective Fabry-Perot modulator

Author

Kirkby, C.J.G. ; Goodwin, M.J. ; Moseley, A.J. ; Robbins, D.J. ; Kearley, M.Q. ; Thompson, J.

Author_Institution

Plessey Res. Caswell Ltd., Allen Clark Res. Centre, Towcester, UK

fYear

1990

fDate

33172

Firstpage

42401

Lastpage

42404

Abstract

Useful modulation at frequencies in excess of 1.3 GHz has been achieved in a long-wavelength InGaAs/InP multiple-quantum-well reflective modulator. Microwave frequency operation of the modulator was investigated using a free-space link, is shown schematically. The modulator was illuminated with focussed radiation from a Fabry-Perot laser emitting close to the 1610 nm resonance, use of a polarisation-selective beam splitter in conjunction with a quarter-wave retarder providing efficient resolution of power reflected from the device in the presence of stray power from other system components. RF drive to the modulator via a bias network permitted investigation of behaviour under a variety of bias conditions. Reflected modulated power was detected using a reverse biased pin photodiode, again coupled via a bias network

Keywords

III-V semiconductors; gallium arsenide; indium compounds; microwave links; optical modulation; 1.3 GHz; 1610 nm; Fabry-Perot laser; Fabry-Perot modulator; InGaAs-InP; RF drive; SHF; bias conditions; bias network; focussed radiation; free-space link; low voltage modulator; microwave frequency operation; multiple-quantum-well reflective modulator; polarisation-selective beam splitter; quarter-wave retarder; reflected modulated power; reverse biased pin photodiode;

fLanguage

English

Publisher

iet

Conference_Titel

Microwave Optoelectronics, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

190725