Hot-carrier stress induced degradation in Multi-STI-Finger LDMOS: An experimental and numerical insight

Degradation induced by hot-carrier stress (HCS) in a Multi-STI-Finger (MF) LDMOS is analyzed through both electrical measurements and TCAD simulations. The critical HCS issues have been first addressed on a conventional STI-based LDMOS. Then, the detrimental effect of extended Si/SiO₂ interfaces along the silicon fingers in the MF-LDMOS has been widely investigated. Experimental results are analyzed and discussed on the basis of numerical simulations. The application of a time-dependent HCS degradation model is successfully proved for the first time on the conventional and MF-LDMOS devices at different stress biases and ambient temperatures.