Title :
A 2um diameter, 9hz dark count, single photon avalanche diode in 130nm cmos technology
Author :
Richardson, J.A. ; Grant, Lindsay A. ; Webster, E.A.G. ; Henderson, Robert K.
Author_Institution :
Imaging Div., ST Microelectron., Edinburgh, UK
Abstract :
We report a CMOS single photon avalanche diode (SPAD) with a 2um active diameter, 9Hz dark count rate at 20°C, photon detection efficiency peak of 14% at 500nm, implemented in a 130nm process technology. The implicit guard ring structure relies on retrograde well doping and overcomes a key problem in scaling SPAD devices to small dimensions. TCAD-based device simulations point the way to high resolution, high fill-factor single photon imaging.
Keywords :
CMOS integrated circuits; avalanche diodes; intelligent sensors; CMOS technology; TCAD-based device simulations; frequency 9 Hz; photon detection; retrograde well doping; single photon avalanche diode; size 130 nm; size 2 mum; size 500 nm; temperature 20 C; CMOS integrated circuits; CMOS technology; Detectors; Imaging; Jitter; Photonics; Pixel;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618371
