DocumentCode :
2804766
Title :
TCAD based device architecture exploration towards half-terahertz silicon/germanium heterojunction bipolar technology
Author :
Sibaja-Hernandez, Arturo ; You, Shuzhen ; Van Huylenbroeck, Stefaan ; Venegas, Rafael ; Meyer, Kristin De ; Decoutere, Stefaan
Author_Institution :
IMEC, Leuven, Belgium
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
246
Lastpage :
249
Abstract :
A 2D TCAD based device architecture exploration of SiGe:C NPN HBTs is presented. Two novel and one conventional self-aligned architecture are explored by process and device simulation. All these three architectures show their capability of achieving maximum oscillation frequency (fmax) of 500 GHz for scaled layout rules.
Keywords :
Ge-Si alloys; electromagnetic oscillations; heterojunction bipolar transistors; technology CAD (electronics); 2D TCAD based device architecture exploration; NPN HBT; SiGe:C; device simulation; frequency 500 GHz; half-terahertz heterojunction bipolar technology; maximum oscillation frequency; process simulation; self-aligned architecture; Capacitance; Heterojunction bipolar transistors; Performance evaluation; Radio frequency; Resistance; Semiconductor process modeling; Sensitivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
ISSN :
1930-8876
Print_ISBN :
978-1-4244-6658-0
Type :
conf
DOI :
10.1109/ESSDERC.2010.5618373
Filename :
5618373
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2804766
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