High-voltage analog front-end circuit for a magnetically-coupled RFID transponder

Author

Rueangsri, Nakarin ; Thanachayanont, Apinunt

Author_Institution

King Mongkut´´s Inst. of Technol. Ladkrabang, Bangkok

fYear

2007

fDate

18-20 Oct. 2007

Firstpage

335

Lastpage

338

Abstract

An analog front-end circuit for a 125-kHz RFID transponder has been designed by using a 0.35-mum high- voltage CMOS process. Due to the use of high voltage MOS transistors in all constituent circuits, RF-to-DC power conversion has been achieved at the maximum coupling coefficient without RF limiter circuits, thus saving significant chip area. Furthermore, large load modulation depth is also permitted to achieve longer reading distance, when compared to a conventional low voltage RFID circuit, simulation results are given to verify the circuit.

Keywords

CMOS analogue integrated circuits; MOSFET; integrated circuit design; radiofrequency identification; transponders; CMOS process; MOS transistors; RF-to-DC power conversion; frequency 125 kHz; high-voltage analog front-end circuit; load modulation depth; magnetically-coupled RFID transponder; radiofrequency identification; size 0.35 mum; CMOS process; Circuit simulation; Coupling circuits; Low voltage; MOSFETs; Magnetic circuits; Power conversion; Radio frequency; Radiofrequency identification; Transponders; ASK modulation; Adaptive load modulation; RFID; high-voltage transponder; reader sensitivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, 2007. APCC 2007. Asia-Pacific Conference on

Conference_Location

Bangkok

Print_ISBN

978-1-4244-1374-4

Electronic_ISBN

978-1-4244-1374-4

Type

conf

DOI

10.1109/APCC.2007.4433444

Filename

4433444