DocumentCode :
2805123
Title :
On the inclusion of Lorentz force effects in TCAD simulations
Author :
Schoenmaker, Wim ; Meuris, Peter ; Jimenez, Jean ; Galy, Philippe
Author_Institution :
MAGWEL NV, Leuven, Belgium
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
190
Lastpage :
193
Abstract :
A new implementation of the Lorentz force is presented in TCAD field solving. The method is applicable to metallic and semiconducting materials. Apart from external magnetic fields, the self-induced magnetic fields are also taken into account. The soundness of the implementation is demonstrated by comparing the numerical results with the outcomes of analytic solutions for a simple wire structure.
Keywords :
computational electromagnetics; magnetic field effects; semiconductor materials; technology CAD (electronics); Lorentz force effect; TCAD simulation; metallic material; self-induced magnetic field; semiconducting material; Current density; Electric potential; Equations; Lorentz covariance; Mathematical model; Silicon; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
ISSN :
1930-8876
Print_ISBN :
978-1-4244-6658-0
Type :
conf
DOI :
10.1109/ESSDERC.2010.5618394
Filename :
5618394
Link To Document :
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