• DocumentCode
    2805123
  • Title

    On the inclusion of Lorentz force effects in TCAD simulations

  • Author

    Schoenmaker, Wim ; Meuris, Peter ; Jimenez, Jean ; Galy, Philippe

  • Author_Institution
    MAGWEL NV, Leuven, Belgium
  • fYear
    2010
  • fDate
    14-16 Sept. 2010
  • Firstpage
    190
  • Lastpage
    193
  • Abstract
    A new implementation of the Lorentz force is presented in TCAD field solving. The method is applicable to metallic and semiconducting materials. Apart from external magnetic fields, the self-induced magnetic fields are also taken into account. The soundness of the implementation is demonstrated by comparing the numerical results with the outcomes of analytic solutions for a simple wire structure.
  • Keywords
    computational electromagnetics; magnetic field effects; semiconductor materials; technology CAD (electronics); Lorentz force effect; TCAD simulation; metallic material; self-induced magnetic field; semiconducting material; Current density; Electric potential; Equations; Lorentz covariance; Mathematical model; Silicon; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
  • Conference_Location
    Sevilla
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-6658-0
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2010.5618394
  • Filename
    5618394
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2805123