Title :
Strategies for millirad sensitivity in PMOS dosimeters
Author :
Conneely, C. ; Connell, B.O. ; Hurley, P. ; Lane, W. ; Adams, L.
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
Previous work at this centre has shown enhanced sensitivity for PMOS dosimeters using a design approach. This is being extended presently to longer chains of devices. Prior to this extension, thermal effects have been investigated and a noise analysis has been undertaken. The need for a temperature compensation technique becomes imperative if the signal/noise ratio is to be improved
Keywords :
MOSFET; compensation; dosimeters; semiconductor device noise; silicon radiation detectors; PMOS dosimeter; RADFET; design; millirad sensitivity; noise analysis; signal/noise ratio; temperature compensation; thermal effects; Costs; Implants; Low-frequency noise; Microelectronics; Noise generators; Noise measurement; Packaging; Personnel; Temperature sensors; Threshold voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
Conference_Location :
Cannes
Print_ISBN :
0-7803-4071-X
DOI :
10.1109/RADECS.1997.698911
