• DocumentCode
    2805187
  • Title

    Strategies for millirad sensitivity in PMOS dosimeters

  • Author

    Conneely, C. ; Connell, B.O. ; Hurley, P. ; Lane, W. ; Adams, L.

  • Author_Institution
    Nat. Microelectron. Res. Centre, Cork, Ireland
  • fYear
    1997
  • fDate
    15-19 Sep 1997
  • Firstpage
    288
  • Lastpage
    293
  • Abstract
    Previous work at this centre has shown enhanced sensitivity for PMOS dosimeters using a design approach. This is being extended presently to longer chains of devices. Prior to this extension, thermal effects have been investigated and a noise analysis has been undertaken. The need for a temperature compensation technique becomes imperative if the signal/noise ratio is to be improved
  • Keywords
    MOSFET; compensation; dosimeters; semiconductor device noise; silicon radiation detectors; PMOS dosimeter; RADFET; design; millirad sensitivity; noise analysis; signal/noise ratio; temperature compensation; thermal effects; Costs; Implants; Low-frequency noise; Microelectronics; Noise generators; Noise measurement; Packaging; Personnel; Temperature sensors; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
  • Conference_Location
    Cannes
  • Print_ISBN
    0-7803-4071-X
  • Type

    conf

  • DOI
    10.1109/RADECS.1997.698911
  • Filename
    698911
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2805187