Title :
980 nm and 850 nm zone lasers
Author :
Vakhshoori, Daryoosh ; Wynn, James D. ; Hong, Minghwei ; Asom, Moses ; Kojima, Keisuke
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
Vertical cavity zone lasers (Z-lasers) operating at 980 nm and 850 nm have been fabricated. This new class of high power (>100 mW) high efficiency (η≈ 36%) large area (70 μm diameter) vertical cavity laser has an output that is automatically focused to a spot at a particular distance away from the laser. This is in contrast to the conventional surface or edge emitting array devices that usually have multiple far-field lobes and need external optical components for focusing purposes. Among other applications, the unique properties of 980 nm Z-lasers makes them attractive as a pump laser for fiber amplifier systems
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; molecular beam epitaxial growth; optical fabrication; quantum well lasers; surface emitting lasers; 100 mW; 36 percent; 70 mum; 850 nm; 980 nm; InGaAs; Z-lasers; external optical components; fiber amplifier systems; focusing purposes; high power lasers; multiple far-field lobes; pump laser; vertical cavity laser; vertical cavity zone lasers; Fiber lasers; Laser excitation; Optical arrays; Optical devices; Optical fiber amplifiers; Optical fiber devices; Power lasers; Pump lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519311
