Ka-Band ultra low noise MMIC amplifier using pseudomorphic HEMTs

Author

Fujimoto, S. ; Katoh, T. ; Ishida, T. ; Oku, T. ; Sasaki, Y. ; Ishikawa, T. ; Mitsui, Y.

Author_Institution

Mitsubishi Electr. Corp., Itami, Japan

fYear

1997

fDate

10-10 June 1997

Firstpage

169

Lastpage

173

Abstract

A Ka-band monolithic low noise two stage amplifier has been developed using an AlGaAs/InGaAs/GaAs pseudomorphic HEMT with a gate length of 0.15 /spl mu/m. For a superior noise figure, the MMIC was optimized by inserting a low loss resonator type stabilizing circuit without sacrificing the gain performance. The amplifier has achieved a 1.0 dB noise figure with an associated gain of 18.0 dB at 32 GHz. These results are the best of AlGaAs/InGaAs/GaAs P-HEMT MMICs ever reported to date.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit noise; 0.15 micron; 1.0 dB; 18.0 dB; 32 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs pseudomorphic HEMT; Ka-band ultra low noise MMIC amplifier; gain; monolithic two stage amplifier; noise figure; resonator type stabilizing circuit; Circuit noise; Gallium arsenide; Indium gallium arsenide; Insertion loss; Low-noise amplifiers; MMICs; Noise figure; PHEMTs; Performance gain; Performance loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-4063-9

Type

conf

DOI

10.1109/RFIC.1997.598768

Filename

598768