Title :
Ka-Band ultra low noise MMIC amplifier using pseudomorphic HEMTs
Author :
Fujimoto, S. ; Katoh, T. ; Ishida, T. ; Oku, T. ; Sasaki, Y. ; Ishikawa, T. ; Mitsui, Y.
Author_Institution :
Mitsubishi Electr. Corp., Itami, Japan
Abstract :
A Ka-band monolithic low noise two stage amplifier has been developed using an AlGaAs/InGaAs/GaAs pseudomorphic HEMT with a gate length of 0.15 /spl mu/m. For a superior noise figure, the MMIC was optimized by inserting a low loss resonator type stabilizing circuit without sacrificing the gain performance. The amplifier has achieved a 1.0 dB noise figure with an associated gain of 18.0 dB at 32 GHz. These results are the best of AlGaAs/InGaAs/GaAs P-HEMT MMICs ever reported to date.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit noise; 0.15 micron; 1.0 dB; 18.0 dB; 32 GHz; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs pseudomorphic HEMT; Ka-band ultra low noise MMIC amplifier; gain; monolithic two stage amplifier; noise figure; resonator type stabilizing circuit; Circuit noise; Gallium arsenide; Indium gallium arsenide; Insertion loss; Low-noise amplifiers; MMICs; Noise figure; PHEMTs; Performance gain; Performance loss;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598768
