High-performance Enhancement-Mode In0.53Ga0.47As surface channels n-MOSFET with thin In0.2Ga0.8As capping and laser anneal effect

In this work we have investigated the effect of thin In_0.2Ga_0.8As capping layer and pulsed laser annealing (PLA) on self-aligned enhancement mode n-channel In_0.53Ga_0.47As metal-oxide-semiconductor field effect transistor (MOSFET). We present the electrical and material characteristics of TaN/ZrO₂/In_0.2Ga_0.8As/In_0.53Ga_0.47As n-MOSFET with atomic layer deposition (ALD) ZrO₂. Electrical characteristics with thin capacitance equivalent thickness (CET) (~0.8 nm), and improved drain current with thin capping layer were obtained. N-channel high-k InGaAs-MOSFETs with good transistor behavior, i.e. improved drain current after additional pulsed laser anneal with RTA anneal, on In_0.53Ga_0.47As substrate have also been demonstrated.