• DocumentCode
    2805430
  • Title

    Varactor-controlled HFET oscillator grids

  • Author

    Sun, L.Q. ; Weikle, R.M., II

  • Author_Institution
    Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
  • Volume
    4
  • fYear
    1997
  • fDate
    13-18 July 1997
  • Firstpage
    2460
  • Abstract
    Researchers in the millimeter-wave community have expended considerable effort to develop efficient and reliable solid-state power combiners based on quasi-optical techniques. The authors investigate a quasi-optical oscillator topology that incorporates varactor tuners into an array of HFETs. The frequency tuning range of the array with, varactor bias is 5.5% and, over this range, the output power varies by 4.5 dB. Varactor bias does not appreciably affect the radiation pattern over the tuning bandwidth of 200 MHz. To maintain symmetry, each cell of the array uses two varactor diodes. Because these varactors are effectively in parallel, this configuration increases the minimum capacitance presented to the gate of the HFET and thus restricts the possible frequency tuning range.
  • Keywords
    feedback oscillators; millimetre wave devices; millimetre wave oscillators; varactors; 200 MHz; frequency tuning range; gate-feedback oscillator grid; hyperabrupt varactor chips; millimeter-wave solid state power combiners; minimum capacitance; output power; quasi-optical oscillator topology; radiation pattern; tuning bandwidth; varactor bias; varactor tuners; varactor-controlled HFET oscillator grids; Frequency; HEMTs; MODFETs; Millimeter wave technology; Oscillators; Power combiners; Solid state circuits; Topology; Tuning; Varactors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation Society International Symposium, 1997. IEEE., 1997 Digest
  • Conference_Location
    Montreal, Quebec, Canada
  • Print_ISBN
    0-7803-4178-3
  • Type

    conf

  • DOI
    10.1109/APS.1997.625478
  • Filename
    625478