DocumentCode
2805430
Title
Varactor-controlled HFET oscillator grids
Author
Sun, L.Q. ; Weikle, R.M., II
Author_Institution
Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
Volume
4
fYear
1997
fDate
13-18 July 1997
Firstpage
2460
Abstract
Researchers in the millimeter-wave community have expended considerable effort to develop efficient and reliable solid-state power combiners based on quasi-optical techniques. The authors investigate a quasi-optical oscillator topology that incorporates varactor tuners into an array of HFETs. The frequency tuning range of the array with, varactor bias is 5.5% and, over this range, the output power varies by 4.5 dB. Varactor bias does not appreciably affect the radiation pattern over the tuning bandwidth of 200 MHz. To maintain symmetry, each cell of the array uses two varactor diodes. Because these varactors are effectively in parallel, this configuration increases the minimum capacitance presented to the gate of the HFET and thus restricts the possible frequency tuning range.
Keywords
feedback oscillators; millimetre wave devices; millimetre wave oscillators; varactors; 200 MHz; frequency tuning range; gate-feedback oscillator grid; hyperabrupt varactor chips; millimeter-wave solid state power combiners; minimum capacitance; output power; quasi-optical oscillator topology; radiation pattern; tuning bandwidth; varactor bias; varactor tuners; varactor-controlled HFET oscillator grids; Frequency; HEMTs; MODFETs; Millimeter wave technology; Oscillators; Power combiners; Solid state circuits; Topology; Tuning; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium, 1997. IEEE., 1997 Digest
Conference_Location
Montreal, Quebec, Canada
Print_ISBN
0-7803-4178-3
Type
conf
DOI
10.1109/APS.1997.625478
Filename
625478
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