Title :
Assessing circuit-level hot-carrier reliability
Author :
Jiang, Wenjie ; Le, Huy ; Chung, James ; Kopley, Thomas ; Marcoux, Paul ; Dai, Changhong
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
fDate :
March 31 1998-April 2 1998
Abstract :
The major factors that cumulatively determine circuit-level hot-carrier reliability are defined and characterized in this paper. The inherent inverse relationship between lifetime-underestimation/criteria-overspecification and the amount of known device/circuit information is explored. Lifetime-underestimation/criteria-overspecification is shown to depend quite strongly on the particular "worst-case" approximations used.
Keywords :
hot carriers; integrated circuit modelling; integrated circuit reliability; circuit information; circuit-level hot-carrier reliability; criteria overspecification; device information; lifetime underestimation; worst-case approximations; CMOS technology; Circuit simulation; Degradation; Equations; Hot carriers; Inverters; MOS devices; MOSFETs; Switches; Voltage;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670509
