The integrated Emitter Turn-off Thyristor (IETO) - an innovative thyristor based high power semiconductor device using MOS assisted turn-off

Author

Bragard, Michael ; Conrad, Marcus ; De Doncker, Rik W.

Author_Institution

RWTH Aachen Univ., Aachen, Germany

fYear

2010

fDate

12-16 Sept. 2010

Firstpage

4551

Lastpage

4557

Abstract

This paper focuses on a new realization method of an Emitter Turn-off Thyristor (ETO). The unity gain turn-off capability of the Gate Commutated Thyristor (GCT) requires extremely low parasitic components within the gate path. The concept of the ETO postulates a MOSFET in the cathode current path of the thyristor, which causes several problems. A new approach leading to a significant smaller and less complex driver design is presented. The drawbacks of the known Emitter Turn-Off Thyristor (ETO) are eliminated by the integration of the MOSFETs into the press pack.

Keywords

MOS-controlled thyristors; commutation; driver circuits; power MOSFET; thyristor applications; ETO; IETO; MOS assisted turn-off; MOSFET; driver design; gate commutated thyristor; integrated emitter turn-off thyristor; parasitic component; thyristor based high power semiconductor device; Capacitors; Cathodes; Driver circuits; Inductance; Logic gates; Presses; Thyristors; Direct FET; ETO; GCT; ICT; IETO; MOS turn-off; press pack; thyristor; unity gain;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2010 IEEE

Conference_Location

Atlanta, GA

Print_ISBN

978-1-4244-5286-6

Electronic_ISBN

978-1-4244-5287-3

Type

conf

DOI

10.1109/ECCE.2010.5618410

Filename

5618410