Title :
High-frequency switching high-power converter with SiC-PiN diodes and Si-IEGTs
Author :
Takao, Kazuto ; Shinohe, Takashi ; Tanaka, Yasunori ; Ohashi, Hiromichi ; Sung, Kyungmin ; Wada, Keiji ; Kanai, Takeo
Author_Institution :
Corporative R&D Center, Toshiba Corp., Kawasaki, Japan
Abstract :
High-frequency switching operations are required in medium-voltage power converters to realize compact power converter systems. High-voltage hybrid pair modules using SiC-PiN diodes and Si-IEGT are expected to increase the switching frequency. In this work, 4.5 kV-400 A SiC-PiN diode and Si-IEGT hybrid pair modules have been developed. Hard driving is applied to the hybrid pair module for low switching losses and stable series voltage balance between two series-connected modules. Operation tests of developed hybrid pair modules with the switching frequency of more than 2 kHz have been carried out in a 1 MVA class prototype power converter.
Keywords :
p-i-n diodes; power semiconductor diodes; switching convertors; Si-IEGT; SiC- PiN diodes; current 400 A; hybrid pair module; medium-voltage power converters; switching power converter; voltage 4.5 kV; Converters; Inverters; Logic gates; Prototypes; Semiconductor diodes; Switches; Switching frequency; Insulated gate bipolar transistors; PiN diodes; Silicon carbide; medium-voltage power converters;
Conference_Titel :
Energy Conversion Congress and Exposition (ECCE), 2010 IEEE
Conference_Location :
Atlanta, GA
Print_ISBN :
978-1-4244-5286-6
Electronic_ISBN :
978-1-4244-5287-3
DOI :
10.1109/ECCE.2010.5618411
