DocumentCode :
2805771
Title :
Photoacoustic spectra for porous Si analyzed by the scattering model with reflection
Author :
Kawahara, T. ; Mihara, M. ; Morimoto, J. ; Miyakawa, T.
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Defense Acad., Yokosuka, Japan
Volume :
2
fYear :
1998
fDate :
1998
Firstpage :
1243
Abstract :
The photoacoustic (PA) spectra are measured on Porous silicon (PS) which is a light emitting Si. PS has many pores and is constructed from the PS layer and the Si substrate. We analyze the PA spectra by the scattering model with the reflection at the interface between the PS layer and the substrate. The scattering effects, the reflection one and the effects of the layer structure on the PA signal are discussed. We compare this model to real PS samples. Two layer structure fits well with the wavelength dependence of PA spectra for the thin PS films
Keywords :
elemental semiconductors; photoacoustic spectra; porous semiconductors; silicon; Si; layer structure; photoacoustic spectra; porous Si; scattering model with reflection; wavelength dependence; Acoustic measurements; Acoustic scattering; Light scattering; Optical devices; Optical films; Optical reflection; Optical scattering; Powders; Silicon; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
ISSN :
1051-0117
Print_ISBN :
0-7803-4095-7
Type :
conf
DOI :
10.1109/ULTSYM.1998.765064
Filename :
765064
Link To Document :
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