Title :
Experimental comparison of programming mechanisms in 1T-DRAM cells with variable channel length
Author :
Hubert, Alexandre ; Bawedin, Maryline ; Guegan, Georges ; Cristoloveanu, Sorin ; Ernst, Thomas ; Faynot, Olivier
Author_Institution :
LETI, CEA, Grenoble, France
Abstract :
The bulk DRAM scaling requirements have lead to many different concepts of capacitor-less single-transistor (1T) DRAM. Amongst the various effects used to program the cell, this study is focused on the Impact Ionization (II), the most common mechanism to store charges in the body of the cell, and the Meta-Stable Dip (MSD) effect. Dynamic measurements are presented showing the impact of the gate length reduction on both the II and the MSD programming mechanisms. It is found that MSD is less impacted by the scaling of standard SOI MOSFETs without specific optimization. Those attractive performances result from the dynamic coupling between the front and back gates in Fully Depleted SOI (FDSOI) transistors.
Keywords :
DRAM chips; MOSFET; silicon-on-insulator; 1T-DRAM cells; MSD programming mechanisms; capacitor-less single-transistor DRAM; dynamic measurements; fully depleted SOI transistors; gate length reduction; impact ionization; metastable dip effect; standard SOI MOSFET; variable channel length; Couplings; Impact ionization; Junctions; Logic gates; Programming; Random access memory; Transistors;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618427
