Effects of advanced processes on hot carrier reliability

Author

Aur, Shian ; Grider, Tad ; McNeil, Vincent ; Holloway, Tom ; Eklund, Robert

Author_Institution

Logic Technol., Texas Instrum. Inc., Dallas, TX, USA

fYear

1998

fDate

March 31 1998-April 2 1998

Firstpage

180

Lastpage

183

Abstract

There are several advanced processes which are being actively studied as candidates for sub-0.25 /spl mu/m technology and beyond. This paper studies the effects on hot carrier reliability from remote plasma nitrided oxide (RPNO), deuterium anneal and pocket implant. It is found that RPNO can improve the hot carrier reliability by making the effective oxide thickness thinner for oxides of the same physical thickness. The deuterium anneal can improve the hot carrier reliability, even with nitride sidewalls if proper annealing is done. While the pocket implant can reduce short channel effects, the hot carrier lifetime is degraded unless optimization is conducted.

Keywords

annealing; carrier lifetime; hot carriers; integrated circuit reliability; integrated circuit technology; ion implantation; nitridation; optimisation; plasma applications; 0.25 micron; D; Si; SiO/sub 2/-Si; SiON-Si; annealing; deuterium anneal; deuterium anneal process; effective oxide thickness; hot carrier lifetime; hot carrier reliability; nitride sidewalls; optimization; oxide physical thickness; pocket implant process; process effects; remote plasma nitrided oxide process; short channel effects; Acceleration; Annealing; Deuterium; Dielectric substrates; Hot carriers; Hydrogen; MOS devices; Stress measurement; Time measurement; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Conference_Location

Reno, NV, USA

Print_ISBN

0-7803-4400-6

Type

conf

DOI

10.1109/RELPHY.1998.670512

Filename

670512