Title :
High-power highly reliable operation (40 mW at 60°C) of compressively strained quantum-well 680-nm AlGaInP LDs
Author :
Kawanaka, S. ; Tanaka, T. ; Yanagisawa, H. ; Minagawa, S.
Author_Institution :
Central Res. Labs., Hitachi Ltd., Tokyo, Japan
Abstract :
Optimized thin quantum-well (QW) structures under compressive strain are examined for high-power characteristics suitable for light sources of optical disk systems. As a result, compressively strained triple-quantum-well LDs can operate stably at 40 mW and a high temperature of 60°C for over 1000 hours
Keywords :
III-V semiconductors; aluminium compounds; deformation; gallium compounds; indium compounds; infrared sources; laser stability; life testing; optical disc storage; optical testing; optimisation; quantum well lasers; semiconductor device reliability; semiconductor device testing; 1000 h; 40 mW; 60 C; 680 nm; AlGaInP; compressively strained quantum-well AlGaInP LDs; compressively strained triple-quantum-well LDs; high temperature; high-power characteristics; high-power highly reliable operation; laser diodes; light sources; optical disk systems; optimized thin quantum-well structures; Capacitive sensors; Current measurement; Degradation; Density measurement; Effective mass; Electrons; Quantum well devices; Quantum wells; Temperature; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519316
