• DocumentCode
    2806611
  • Title

    High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-μm InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE

  • Author

    Chida, Hiroaki ; Hamamoto, Kiich ; Fukagai, Kazuo ; Miyazaki, Takashi ; Ishikawa, Shin

  • Author_Institution
    Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    165
  • Lastpage
    166
  • Abstract
    Narrow ridge waveguide 0.98-μm InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; optical couplers; quantum well lasers; ridge waveguides; sputter etching; waveguide lasers; 0.98 mum; 150 mW; 254 mW; InGaAs-AlGaAs; InGaAs/AlGaAs strained-quantum-well lasers; fiber-coupled power; fundamental lateral-mode; high-power single-transverse-mode operation; in situ monitored; in situ monitored RIBE; narrow-ridge-waveguide lasers; reactive ion beam etching; Etching; Indium gallium arsenide; Ion beams; Laser modes; Monitoring; Optical fiber testing; Plasma temperature; Power generation; Quantum well lasers; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.519317
  • Filename
    519317
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2806611