Title :
High-power single-transverse-mode operation of narrow-ridge-waveguide 0.98-μm InGaAs/AlGaAs strained-quantum-well lasers by in situ monitored RIBE
Author :
Chida, Hiroaki ; Hamamoto, Kiich ; Fukagai, Kazuo ; Miyazaki, Takashi ; Ishikawa, Shin
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Ibaraki, Japan
Abstract :
Narrow ridge waveguide 0.98-μm InGaAs/AlGaAs quantum-well laser diodes (LDs) fabricated by in situ monitored reactive ion beam etching operated in the fundamental lateral-mode up to 254 mW, and fiber-coupled power was as much as 150 mW
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; optical couplers; quantum well lasers; ridge waveguides; sputter etching; waveguide lasers; 0.98 mum; 150 mW; 254 mW; InGaAs-AlGaAs; InGaAs/AlGaAs strained-quantum-well lasers; fiber-coupled power; fundamental lateral-mode; high-power single-transverse-mode operation; in situ monitored; in situ monitored RIBE; narrow-ridge-waveguide lasers; reactive ion beam etching; Etching; Indium gallium arsenide; Ion beams; Laser modes; Monitoring; Optical fiber testing; Plasma temperature; Power generation; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519317
