Title :
Analysis of Harmonic Distortion in UDG-MOSFETs
Author :
Dutta, Arin ; Koley, Kalyan ; Saha, Samar K. ; Sarkar, Chandan K.
Author_Institution :
Electron. & Telecommun. Eng. Dept., Jadavpur Univ., Kolkata, India
Abstract :
In this paper, the harmonic distortion (HD) in the underlap double-gate MOSFETs (UDG-MOSFETs) with high- k spacers is analyzed. The HD occurs due to the nonlinearity in the device performance and therefore, a detailed analysis of the HD as a function of spacer dielectric constant (k) is critical to ensure device reliability for RF performance. In this paper, the analysis is performed for the primary components, the second-order distortion (HD2), and the third-order distortion (HD3) along with the total HD. The parameters analyzed for the HD study of the UDG-MOSFETs with high- k spacers are the drain current, the transconductance, and the transconductance generation factor. The results of the analysis suggest a reduction in the distortion phenomenon for the high- k spacer devices, thereby ensuring reliability of these devices for RF applications. Also, a detailed analysis of HD2 and HD3 as a function of k of the high- k spacers are performed using UDG-MOSFETs in cascode and differential amplifier circuits.
Keywords :
MOSFET; differential amplifiers; harmonic distortion; high-k dielectric thin films; permittivity; semiconductor device reliability; UDG-MOSFET; device performance; differential amplifier circuits; drain current; harmonic distortion; high-k spacers; second-order distortion; semiconductor device reliability; spacer dielectric constant; third-order distortion; transconductance generation factor; underlap double-gate MOSFET; Dielectric constant; High K dielectric materials; High definition video; Logic gates; Performance evaluation; Radio frequency; Scattering; Harmonic distortion (HD); high-$k$; linearity; spacer; symmetric underlap DG FET;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2306971
