• DocumentCode
    2807301
  • Title

    Arrays of red VCSELs with partial top dielectric stack DBRs

  • Author

    Lott, James A. ; Schneider, R.P., Jr. ; Malloy, K.J. ; Kilcoyne, S.P. ; Choquette, K.D.

  • Author_Institution
    Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
  • fYear
    1994
  • fDate
    19-23 Sep 1994
  • Firstpage
    173
  • Lastpage
    174
  • Abstract
    Summary form only given. We report arrays (1×64) of red vertical cavity GaInP strained quantum well surface emitting lasers (VCSELs) with partial top dielectric stack distributed Bragg reflectors (DBRs). Output powers exceed 0.5 mW at λ0-660 nm for 15 μm diameter devices with threshold currents below 2 mA
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; indium compounds; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 0.5 mW; 15 mum; 2 mA; 660 nm; GaInP; GaInP strained quantum well surface emitting laser arrays; VCSELs; output powers; partial top dielectric stack DBRs; partial top dielectric stack distributed Bragg reflectors; red VCSELs; red vertical cavity lasers; threshold currents; Apertures; Dielectrics; Distributed Bragg reflectors; Etching; Implants; Optical buffering; Protons; Resonance; Threshold current; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1994., 14th IEEE International
  • Conference_Location
    Maui, HI
  • Print_ISBN
    0-7803-1754-8
  • Type

    conf

  • DOI
    10.1109/ISLC.1994.519320
  • Filename
    519320
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2807301