Title :
Arrays of red VCSELs with partial top dielectric stack DBRs
Author :
Lott, James A. ; Schneider, R.P., Jr. ; Malloy, K.J. ; Kilcoyne, S.P. ; Choquette, K.D.
Author_Institution :
Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
Abstract :
Summary form only given. We report arrays (1×64) of red vertical cavity GaInP strained quantum well surface emitting lasers (VCSELs) with partial top dielectric stack distributed Bragg reflectors (DBRs). Output powers exceed 0.5 mW at λ0-660 nm for 15 μm diameter devices with threshold currents below 2 mA
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium compounds; indium compounds; quantum well lasers; semiconductor laser arrays; surface emitting lasers; 0.5 mW; 15 mum; 2 mA; 660 nm; GaInP; GaInP strained quantum well surface emitting laser arrays; VCSELs; output powers; partial top dielectric stack DBRs; partial top dielectric stack distributed Bragg reflectors; red VCSELs; red vertical cavity lasers; threshold currents; Apertures; Dielectrics; Distributed Bragg reflectors; Etching; Implants; Optical buffering; Protons; Resonance; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519320
