Measurement of ion-induced secondary electron emission coefficient for MgO thin film with plasma treatment

The characteristics of MgO protective layers are very important for the development of recent AC-type plasma display panel (AC-PDP). The ion-induced secondary electron emission coefficient γ is one of the characteristics of the MgO protective layer which correlates to the ignition voltage of AC-PDPs. Recently many researchers have been studying to get the highest γ. Therefore we selected the method of oxygen (O₂, Ar, H₂) plasma treatment for MgO protective layer. In this research, We used two steps of MgO protected layer growing method to get higher quality of it First MgO thin films were prepared by using electron beam evaporation method from sintered materials. And then they were treated by O₂, Ar and H₂ plasma by using RF-plasma generation system. And secondary electron emission coefficient obtained for MgO protective layers deposited from sintered material with O₂ plasma treatment by 5, 10, minutes and without plasma treatment, respectively. The ion-induced secondary electron emission coefficient γ of MgO protective layer was measured by γ-FIB (focused ion beam) system throughout this experiment to investigate the influence of these plasma treatments on it. The energy of Ne⁺ ions used has been ranged from 100 eV 10 200 eV throughout this experiment.