DocumentCode
2807509
Title
Tin whisker growth induced by high electron current density
Author
Lin, Y.W. ; Kao, C. Robert
Author_Institution
Nat. Taiwan Univ., Taipei
fYear
2007
fDate
1-3 Oct. 2007
Firstpage
62
Lastpage
65
Abstract
The effect of electric current on the tin whisker growth on Sn stripes was studied. The Sn stripes, one mum in thickness, were patterned on silicon wafers. The design of the Sn stripes allowed for the simultaneous study of the effect of current crowding and current density. It was found that the stress induced by the electric current caused the formation of many Sn whiskers. A higher current density caused more Sn whiskers to form. Of the three temperatures studied, 50degC was the most favorable one for the formation of the Sn whiskers. In addition, the current crowding effect also influenced the whisker growth.
Keywords
crystal growth; current density; surface finishing; tin; whiskers (crystal); Sn; current crowding effect; electric current; high electron current density; silicon wafers; temperature 50 C; tin whisker growth; Current density; Electrons; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology, 2007. IMPACT 2007. International
Conference_Location
Taipei
Print_ISBN
978-1-4244-1636-3
Electronic_ISBN
978-1-4244-1637-0
Type
conf
DOI
10.1109/IMPACT.2007.4433568
Filename
4433568
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