An X-band MESFET grid oscillator with gate feedback

Author

Weikle, R.M., II. ; Kim, M. ; Hacker, J.B. ; Rutledge, D.B.

Author_Institution

Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA

fYear

1991

fDate

24-28 June 1991

Firstpage

134

Abstract

A design for a quasi-optical MESFET power-combining array that utilizes gate feedback is presented. This circuit is different from previous MESFET grids that utilized packaged devices and source feedback to produce an oscillator at 5 GHz. The present configuration allows the drain and source leads to couple directly to the radiated field. Simulations indicate that this configuration can be used to build a high-frequency oscillator. A transmission-line model for the grid is presented and used to design a 25-element grid for operation at 10 GHz. Measurements show that the grid delivers an effective radiated power of 2.4 W at 10.9 GHz.<>

Keywords

Schottky gate field effect transistors; feedback; microwave oscillators; solid-state microwave circuits; 10.9 GHz; 2.4 W; 5 GHz; MESFET grid oscillator; SHF; X-band; effective radiated power; gate feedback; high-frequency oscillator; power-combining array; radiated field; transmission-line model; Computer hacking; Couplings; Design engineering; Laser feedback; MESFETs; Magnetic analysis; Oscillators; Power engineering and energy; Solid state circuits; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 1991. AP-S. Digest

Conference_Location

London, Ontario, Canada

Print_ISBN

0-7803-0144-7

Type

conf

DOI

10.1109/APS.1991.174791

Filename

174791