DocumentCode :
2807715
Title :
Bandwidth simulation for high speed memory package
Author :
Chen, Cheng-Pin ; Cheng, Jing-Hua ; Fan, Wen-Jeng ; Lin, Nan-Chun ; Su, Ting-Feng
Author_Institution :
Powertech Technol. Inc., Hsinchu
fYear :
2007
fDate :
1-3 Oct. 2007
Firstpage :
110
Lastpage :
113
Abstract :
This is a comparative study for varied type package performance. From the study, we are able to quantify the performance by parasitic parameter, bandwidth, voltage swing of Vref and skew simulation results.
Keywords :
memory architecture; random-access storage; Vref; bandwidth simulation; high speed memory package; parasitic parameters; skew simulation; voltage swing; Bandwidth; Bonding; Circuit simulation; Electromagnetic compatibility; Frequency; Gold; Lead; Packaging; SPICE; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology, 2007. IMPACT 2007. International
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-1636-3
Electronic_ISBN :
978-1-4244-1637-0
Type :
conf
DOI :
10.1109/IMPACT.2007.4433579
Filename :
4433579
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2807715
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