28 V low thermal impedance HBT with 20 W CW output power

Author

Hill, D. ; Tae Kim

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1997

fDate

10-10 June 1997

Firstpage

189

Lastpage

192

Abstract

AlGaAs/GaAs heterojunction bipolar transistors have been fabricated which exhibit record output power for GaAs flip-chip technology, and record operating voltage for GaAs microwave power devices. Transistors with 2 mm emitter length readily achieve 20 W CW output power at 2 GHz when biased at 28 V, with typical power-added efficiencies of 62% (typical collector efficiencies of 70%). Maximum CW output power of 25 W has been obtained, corresponding to a power density of 12.5 W/mm.

Keywords

III-V semiconductors; aluminium compounds; flip-chip devices; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; microwave power transistors; power bipolar transistors; thermal resistance; 2 GHz; 2 mm; 20 to 25 W; 28 V; 62 percent; 70 percent; AlGaAs-GaAs; CW output power; HBT; III-V semiconductors; collector efficiencies; emitter length; flip-chip technology; microwave power devices; operating voltage; power density; power-added efficiencies; thermal impedance; Costs; Fabrication; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Power generation; Silicon; Thermal conductivity; Thermal resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-4063-9

Type

conf

DOI

10.1109/RFIC.1997.598780

Filename

598780