Title :
Random-telegraph-signal noise in AlGaN/GaN MIS-HEMT on silicon
Author :
Yihu Li ; Goh Wang Ling ; Geok Ing Ng ; Zhi Hong Liu ; Yong-Zhong Xiong ; Lo, Pechin
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Abstract :
The traps in an AlGaN/GaN metal-insulator-silicon-high-electron-mobility-transistor on silicon are investigated by analysing the random-telegraph-signal (RTS) noise in the drain current. Two different types of RTS noise due to the traps at the gate-oxide and AlGaN have been observed in this reported work. Through the analysis of the two RTS noises, the presences of the two trap types are verified and the trap locations have also been identified.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; silicon; wide band gap semiconductors; AlGaN-GaN; MIS-HEMT on silicon; RTS noise; Si; gate-oxide; metal-insulator-silicon-high-electron-mobility-transistor on silicon; random-telegraph-signal noise; trap locations; trap types;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2012.4285
