Title :
Modeling of dielectric liquids with low conductivity
Author :
Bloshchitsyn, V. ; Shaposhnikov, A. ; Stishkov, Y.K.
Author_Institution :
St.-Petersburg State Univ., St. Petersburg
fDate :
June 30 2008-July 3 2008
Abstract :
Analyzing of ionic mediums conductivity to explain an appearing of charge density was made by previous authors. Other papers give according methods, programs and results. There is a large difference between dielectric liquids (with low conductivity), quasi-neutral plasma and other mediums with strong ionic conductivity. Charge density in dielectric liquids has an important role for a conductivity process in such systems. Thanks to the fact that the charge density is different to zero, differential equation system (Poisons-Nernst-Plank system) describing such mediums is not linear. There is no exact analytical solution for such mediums. Therefore we will solve this system by computational methods. These algorithms are based on a finite difference method. Main programpsilas features are multi-components flow modeling and impulse voltage modeling. There are two kinds of source terms in equations: on electrodes and in the volume (dissociation and recombination). Results returned by the program have a shape identity with experimental results. Exact results verification by experiments is the aim of our future activity.
Keywords :
charge density waves; dielectric liquids; finite difference methods; ionic conductivity; Poisons Nernst Plank system; charge density; dielectric liquids; differential equation system; finite difference method; impulse voltage modeling; ionic conductivity; multi components flow modeling; quasi neutral plasma; shape identity; Anodes; Boundary conditions; Cathodes; Conductivity; Dielectric liquids; Differential equations; Electrodes; Nonlinear equations; Poisson equations; Spontaneous emission;
Conference_Titel :
Dielectric Liquids, 2008. ICDL 2008. IEEE International Conference on
Conference_Location :
Futuroscope-Chasseneuil
Print_ISBN :
978-1-4244-1585-4
Electronic_ISBN :
978-1-4244-1586-1
DOI :
10.1109/ICDL.2008.4622508