Polarization control of vertical-cavity surface-emitting lasers by a birefringent metal/semiconductor polarizer terminating a distributed Bragg reflector

Author

Mukaihara, T. ; Ohnoki, N. ; Hayashi, Y. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

1994

fDate

19-23 Sep 1994

Firstpage

183

Lastpage

184

Abstract

We propose a polarization controlled vertical-cavity surface-emitting laser (VCSEL) using a birefringent metal/semiconductor polarizer on a distributed Bragg reflector. Theoretically, we found that the proposed concept can provide an extremely large polarization selectivity at the resonant cavity wavelength by adjusting the phase condition between two polarization states. Experimentally, we have demonstrated a 0.98 μm InGaAs/GaAs VCSEL with an Au/GaAs polarizer exhibiting a fairly good polarization control and maintaining low thresholds

Keywords

III-V semiconductors; birefringence; distributed Bragg reflector lasers; gallium arsenide; gold; indium compounds; laser cavity resonators; optical polarisers; quantum well lasers; reflectivity; surface emitting lasers; 0.98 mum; Au-GaAs; Au/GaAs polarizer; InGaAs-GaAs; InGaAs/GaAs VCSEL; VCSEL; birefringent metal/semiconductor polarizer; distributed Bragg reflector; good polarization control; large polarization selectivity; phase condition; polarization control; polarization controlled vertical-cavity surface-emitting laser; polarization states; resonant cavity wavelength; strained quantum well lasers; vertical-cavity surface-emitting lasers; Birefringence; Distributed Bragg reflectors; Gallium arsenide; Laser theory; Optical control; Polarization; Resonance; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519325

Filename

519325