Title :
Polarization control of vertical-cavity surface-emitting lasers by a birefringent metal/semiconductor polarizer terminating a distributed Bragg reflector
Author :
Mukaihara, T. ; Ohnoki, N. ; Hayashi, Y. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We propose a polarization controlled vertical-cavity surface-emitting laser (VCSEL) using a birefringent metal/semiconductor polarizer on a distributed Bragg reflector. Theoretically, we found that the proposed concept can provide an extremely large polarization selectivity at the resonant cavity wavelength by adjusting the phase condition between two polarization states. Experimentally, we have demonstrated a 0.98 μm InGaAs/GaAs VCSEL with an Au/GaAs polarizer exhibiting a fairly good polarization control and maintaining low thresholds
Keywords :
III-V semiconductors; birefringence; distributed Bragg reflector lasers; gallium arsenide; gold; indium compounds; laser cavity resonators; optical polarisers; quantum well lasers; reflectivity; surface emitting lasers; 0.98 mum; Au-GaAs; Au/GaAs polarizer; InGaAs-GaAs; InGaAs/GaAs VCSEL; VCSEL; birefringent metal/semiconductor polarizer; distributed Bragg reflector; good polarization control; large polarization selectivity; phase condition; polarization control; polarization controlled vertical-cavity surface-emitting laser; polarization states; resonant cavity wavelength; strained quantum well lasers; vertical-cavity surface-emitting lasers; Birefringence; Distributed Bragg reflectors; Gallium arsenide; Laser theory; Optical control; Polarization; Resonance; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519325
