Reliability analysis using Weibull distribution on the breakdown of MIM capacitors

Rapidly growing performance and mixed-signal integration are driving the needs for product and component miniaturization in electronics application. The passive components show great potential for high frequency, high density, and low cost applications. Regarding to the capacitors, the dielectric breakdown field is one of the important concerns for the capacitor reliability. The breakdown of dielectric is originated at a fatal flaw that grows to cause failure and can be explained by the weakest-link theory. In this study, metal- insulator-metal (MIM) capacitors with plasma enhanced chemical vapor deposited (PECVD) silicon nitride and oxide are prepared. Ammonia (NH3) and N20 plasma are applied after the deposition of the dielectric silicon nitride and oxide layer, respectively. The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of the electrode area as well as the plasma treatment on the breakdown of the MIM capacitors. The time dependent dielectric breakdown testing indicates a decrease in both the leakage current and the lifetime of the SiN_x MIM capacitors treated after NH3 plasma treatment. Possible dielectric degradation mechanism is explored.