Title :
Systematic investigations on MESFETs and passive components transplanted by epitaxial lift off onto host materials with various resistivities
Author :
Morf, T. ; Biber, C. ; Bachtold, W.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
In this paper we present RF measurements on MESFETs and spiral inductors fabricated on GaAs and transplanted by epitaxial lift off (ELO). ELO is a technology by which epitaxially grown layers are lifted off from their growth substrate and are subsequently reattached to a new host substrate.
Keywords :
S-parameters; Schottky gate field effect transistors; characteristics measurement; inductors; microwave field effect transistors; semiconductor epitaxial layers; semiconductor technology; GaAs; InP; MESFETs; RF measurements; Si; SiO/sub 2/; epitaxial lift off; host substrate; passive components; spiral inductors; Conductivity; Etching; Gallium arsenide; Indium phosphide; Laboratories; MESFETs; Radio frequency; Scanning electron microscopy; Silicon; Substrates;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598783
