• DocumentCode
    2808697
  • Title

    Electron collision cross-sections in mono-silane (SiH4) molecule: an investigation and analysis

  • Author

    Haq, Saeed Ul

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
  • fYear
    2005
  • fDate
    16-19 Oct. 2005
  • Firstpage
    39
  • Lastpage
    42
  • Abstract
    Investigation and analysis of data for collision of electron with SiH4 molecule has been carried out by reviewing the published data during the last two decades. Momentum transfer, vibrational-excitation, excitation, dissociation, dissociation-attachment, and ionization cross-sections are used to calculate and analyze the transport coefficients. The measured parameters reported in this work are drift velocity (W) and characteristic energy (D/μ). Calculation of transport coefficients is carried out by using the two-term numerical solution of Boltzmann equation (Bolsig).
  • Keywords
    Boltzmann equation; electron impact dissociation; electron impact excitation; electron impact ionisation; numerical analysis; rotational-vibrational energy transfer; silicon compounds; Boltzmann equation; SiH4; dissociation cross-section; dissociation-attachment cross-section; drift velocity; electron collision cross-sections; excitation cross-section; ionization cross-sections; momentum transfer; monosilane molecule; transport coefficients; two-term numerical solution; vibrational-excitation cross-section; Amorphous materials; Electron beams; Electron mobility; Energy measurement; Ionization; Plasma applications; Plasma materials processing; Plasma measurements; Plasma properties; Semiconductor films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Insulation and Dielectric Phenomena, 2005. CEIDP '05. 2005 Annual Report Conference on
  • Print_ISBN
    0-7803-9257-4
  • Type

    conf

  • DOI
    10.1109/CEIDP.2005.1560615
  • Filename
    1560615