DocumentCode
2808697
Title
Electron collision cross-sections in mono-silane (SiH4) molecule: an investigation and analysis
Author
Haq, Saeed Ul
Author_Institution
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
fYear
2005
fDate
16-19 Oct. 2005
Firstpage
39
Lastpage
42
Abstract
Investigation and analysis of data for collision of electron with SiH4 molecule has been carried out by reviewing the published data during the last two decades. Momentum transfer, vibrational-excitation, excitation, dissociation, dissociation-attachment, and ionization cross-sections are used to calculate and analyze the transport coefficients. The measured parameters reported in this work are drift velocity (W) and characteristic energy (D/μ). Calculation of transport coefficients is carried out by using the two-term numerical solution of Boltzmann equation (Bolsig).
Keywords
Boltzmann equation; electron impact dissociation; electron impact excitation; electron impact ionisation; numerical analysis; rotational-vibrational energy transfer; silicon compounds; Boltzmann equation; SiH4; dissociation cross-section; dissociation-attachment cross-section; drift velocity; electron collision cross-sections; excitation cross-section; ionization cross-sections; momentum transfer; monosilane molecule; transport coefficients; two-term numerical solution; vibrational-excitation cross-section; Amorphous materials; Electron beams; Electron mobility; Energy measurement; Ionization; Plasma applications; Plasma materials processing; Plasma measurements; Plasma properties; Semiconductor films;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Insulation and Dielectric Phenomena, 2005. CEIDP '05. 2005 Annual Report Conference on
Print_ISBN
0-7803-9257-4
Type
conf
DOI
10.1109/CEIDP.2005.1560615
Filename
1560615
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