• DocumentCode
    2808907
  • Title

    Broadband Monolithic Low-Noise Feedback Amplifiers

  • Author

    Rigby, P.N. ; Suffolk, J.R. ; Pengelly, R.S.

  • Volume
    83
  • Issue
    1
  • fYear
    1983
  • fDate
    May 31 1983-June 1 1983
  • Firstpage
    71
  • Lastpage
    75
  • Abstract
    A 0.6 to 6 GHz monolithic GaAs FET low-noise feedback amplifier has been developed. This amplifier chip has a gain of 6 dB and a noise figure of around 4 dB over the bandwidth. Gains of dB have been achieved at 1/21 dss with 1 dB gain compression points 21 dBm over the band. This paper discusses the design of such amplifiers using as an example a 1 to 10 GHz two stage monolithic amplifier chip presently under development which is capable of being cascaded up to total gains of 50 dB or so with +- 1.5 dB ripple.
  • Keywords
    Bandwidth; FETs; Feedback amplifiers; Frequency; Gain; Gallium arsenide; Inductance; MESFETs; Noise figure; Parasitic capacitance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Conference_Location
    Dallas, TX, USA
  • Type

    conf

  • DOI
    10.1109/MCS.1983.1151046
  • Filename
    1151046
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2808907