A V-band GaAs MMIC chip set on a highly reliable WSi/Au refractory gate process

Author

Mizoe, J. ; Matsumura, T. ; Unosawa, K. ; Akiba, Y. ; Nagai, K. ; Sato, H. ; Saryo, T. ; Inoue, T.

Author_Institution

C&C LSI Dev. Div., NEC Corp., Kawasaki, Japan

fYear

1997

fDate

10-10 June 1997

Firstpage

207

Lastpage

210

Abstract

A compact V-band GaAs MMIC chip set consisting of (1) a single highly integrated receiver MMIC with 6.5 dB NF and 2 dB conversion gain using a subharmonically pumped mixer and (2) a transmitter MMIC having a state-of-the-art 30-60 GHz doubler with 14.3 dB maximum conversion gain, 17.7 dBm output power and broadband RF characteristics has been successfully implemented with a refractory WSi/Au gate for high reliability. The HJFETs of these MMICs exhibited an MTTF of 4E7 hours at a channel temperature (Tch) of 130/spl deg/C. This result demonstrates high potential of our MMIC technology and to enable highly reliable and highly integrated V- and W-band systems.

Keywords

III-V semiconductors; JFET integrated circuits; field effect MIMIC; gallium arsenide; integrated circuit metallisation; integrated circuit reliability; millimetre wave frequency convertors; millimetre wave receivers; radio transmitters; 0.18 micron; 130 C; 14.3 dB; 2 dB; 30 GHz; 4E7 hr; 6.5 dB; 60 GHz; EHF; GaAs; GaAs MMIC chip set; HJFETs; MM-wave MMIC technology; MM-wave doubler; V-band; W-band; WSi-Au; WSi/Au refractory gate process; broadband RF characteristics; highly reliable refractory gate; receiver MMIC; subharmonically pumped mixer; transmitter MMIC; Gain; Gallium arsenide; Gold; MMICs; Noise measurement; Power generation; Power system reliability; Radio frequency; Temperature; Transmitters;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-4063-9

Type

conf

DOI

10.1109/RFIC.1997.598786

Filename

598786