A D-LDD (Double Lightly-Doped Drain) structure H-MESFET for MMIC applications

Author

Yamane, Y. ; Onodera, K. ; Nittono, T. ; Nishimura, K. ; Yamasaki, K. ; Kanda, A.

Author_Institution

NTT Syst. Electron. Labs., Kanagawa, Japan

fYear

1997

fDate

10-10 June 1997

Firstpage

211

Lastpage

214

Abstract

This paper proposes a new D-LDD (Double Lightly-Doped Drain) structure for InGaP-InGaAs H-MESFETs (Heterostructure-MESFET). A D-LDD H-MESFET has three kinds of low resistance layers in the drain region, while a conventional H-MESFET has two layers. This structure improves MAG accompanied by Rd reduction with minimized gate-breakdown-voltage degradation and Cgd increase. These trade-offs between Rd and breakdown voltage are discussed in detail. Consequently, a typical MAG at 50 GHz exhibits 8.9 dB S21 in a MESFET and 7.7 dB S21 in a 1-stage amplifier. The high-frequency circuit operation proves that this technology is one of the most promising for MMIC applications.

Keywords

III-V semiconductors; MESFET integrated circuits; MMIC amplifiers; Schottky gate field effect transistors; electric breakdown; field effect MMIC; gallium arsenide; gallium compounds; indium compounds; microwave field effect transistors; 0.1 micron; 50 GHz; 8 V; H-MESFET; InGaP-InGaAs; MMIC applications; double LDD structure; double lightly-doped drain structure; gate-breakdown-voltage; heterostructure-MESFET; high-frequency circuit operation; single-stage amplifier; Circuits; Degradation; FETs; Fabrication; Gallium arsenide; Implants; Laboratories; MESFETs; MMICs; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-4063-9

Type

conf

DOI

10.1109/RFIC.1997.598787

Filename

598787