A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with integrated Y-coupled passive waveguide by selective-area metalorganic chemical vapor deposition

Author

Cockerill, T.M. ; Osowski, M.L. ; Lammert, R.M. ; Coleman, J.J.

Author_Institution

Mater. Res. Lab., Illinois Univ., Urbana, IL, USA

fYear

1994

fDate

19-23 Sep 1994

Firstpage

195

Lastpage

196

Abstract

Summary form only given. A strained-layer InGaAs-GaAs buried heterostructure circular ring laser with an integrated Y-coupled passive waveguide is fabricated by selective-area growth. The device operates (300 K cw) single mode with side mode suppression ⩾24 dB

Keywords

III-V semiconductors; chemical vapour deposition; gallium arsenide; indium compounds; integrated optoelectronics; laser modes; optical couplers; optical fabrication; ring lasers; semiconductor growth; semiconductor lasers; waveguide lasers; 300 C; InGaAs-GaAs; InGaAs-GaAs buried heterostructure circular ring laser; cw single mode; integrated Y-coupled passive waveguide; selective-area growth; selective-area metalorganic chemical vapor deposition; side mode suppression; strained-layer; Etching; Laser modes; Optical losses; Optical surface waves; Optical waveguides; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Threshold current; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519331

Filename

519331