Title :
Hot-carrier degradation mechanism and promising device design of nMOSFETs with nitride sidewall spacer
Author :
Sambonsugi, Yasuhiro ; Sugii, Toshihiro
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
March 31 1998-April 2 1998
Abstract :
We investigated the HC reliability of deep submicron LDD nMOSFETs with nitride sidewalls, and found a unique stress bias dependence of HC degradation under lower stress bias conditions. This means lifetime estimations are inconclusive because of deviations from the empirical law. Moreover, we succeeded in improving HC reliability in nitride sidewall devices by shifting the location of the HC injection.
Keywords :
MOSFET; dielectric thin films; hot carriers; semiconductor device reliability; semiconductor device testing; HC injection location; HC reliability; LDD nMOSFETs; Si/sub 3/N/sub 4/; device design; hot carrier injection location; hot carrier reliability; hot-carrier degradation mechanism; lifetime estimations; nMOSFETs; nitride sidewall devices; nitride sidewall spacer; nitride sidewalls; stress bias conditions; stress bias dependence; Degradation; Electron traps; Hot carriers; Laboratories; Life estimation; Lifetime estimation; Logic devices; MOSFETs; Random access memory; Stress;
Conference_Titel :
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location :
Reno, NV, USA
Print_ISBN :
0-7803-4400-6
DOI :
10.1109/RELPHY.1998.670531
