Title :
Low phase noise Ka-band VCOs using InGaP/GaAs HBTs and coplanar waveguide
Author :
Heins, M.S. ; Barlage, D.W. ; Fresina, M.T. ; Ahmari, D.A. ; Hartmann, Q.J. ; Stillman, G.E. ; Feng, M.
Author_Institution :
Center for Compound Semicond. Microelectron., Illinois Univ., Urbana, IL, USA
Abstract :
Ka-band voltage controlled oscillators (VCOs) have been designed using InGaP/GaAs HBT technology. The best measured VCO shows a phase noise of -95 dBc/Hz at 100 kHz offset and -112 dBc/Hz at 1 MHz offset, delivering 5.3 dBm output power at 40.8 GHz. Variations of circuit topology and resonator type were fabricated to evaluate their contribution to phase noise and tuning range.
Keywords :
III-V semiconductors; bipolar MIMIC; circuit tuning; coplanar waveguides; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit noise; millimetre wave oscillators; phase noise; voltage-controlled oscillators; 40.8 GHz; CPW; EHF; InGaP-GaAs; InGaP/GaAs HBT technology; Ka-band VCOs; MM-wave type; coplanar waveguide; low phase noise; tuning range; voltage controlled oscillators; Circuit optimization; Circuit topology; Gallium arsenide; Heterojunction bipolar transistors; Noise measurement; Phase measurement; Phase noise; Power generation; Power measurement; Voltage-controlled oscillators;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598789
