High temperature and high power operation of dual strained layer QW visible laser diodes

Author

Valster, A. ; van der Poel, C.J.

Author_Institution

Philips Optoelectron. Centr, Eindhoven, Netherlands

fYear

1994

fDate

19-23 Sep 1994

Firstpage

197

Lastpage

198

Abstract

Summary form only given. Very reliable, high performance monolithic dual visible light emitting GaInP-AlInGaP QW laser diodes are described with 25 μm centre to centre spacing. Record-low crosstalk of less than 3% at T=50°C in the full output power range of 2-20 mW/channel is demonstrated. Crosstalk and droop are related, both theoretically and experimentally, to lasing wavelength, output power and device geometry

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; optical crosstalk; quantum well lasers; 2 to 20 mW; 25 mum; 50 C; GaInP-AlInGaP; GaInP-AlInGaP QW laser diodes; crosstalk; device geometry; droop; dual strained layer QW visible laser diodes; full output power range; high performance monolithic dual visible light emitting QW laser diodes; high power operation; high temperature operation; lasing wavelength; output power; record-low crosstalk; reliable; Crosstalk; Diode lasers; Geometrical optics; Laser applications; Laser theory; Lasers and electrooptics; Power generation; Power lasers; Quantum well lasers; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519332

Filename

519332