MESFET oscillator design based on feedback mapping classification

Author

Poole, C.R.

Author_Institution

Dept. of Electron. Eng., City Polytech. of Hong Kong, Kowloon, Hong Kong

fYear

1990

fDate

12-14 Aug 1990

Firstpage

609

Abstract

Limits of active device S-parameters obtainable using feedback are predicted by classification of feedback mappings. Reverse mapping is used to determine optimum feedback terminations. The prediction of maximum S-parameters and optimal terminations based solely on the measured two-port parameters of the active device is described. The advantage of using the technique is illustrated by an oscillator design example

Keywords

S-parameters; Schottky gate field effect transistors; feedback; lumped parameter networks; microwave oscillators; solid-state microwave circuits; MESFET oscillator design; device S-parameters; feedback mapping classification; maximum S-parameter prediction; measured two-port parameters; optimum feedback terminations; oscillator design example; reverse mapping; Circuits; Cities and towns; Electrical resistance measurement; Equations; MESFETs; Microwave frequencies; Microwave oscillators; Negative feedback; Reflection; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on

Conference_Location

Calgary, Alta.

Print_ISBN

0-7803-0081-5

Type

conf

DOI

10.1109/MWSCAS.1990.140792

Filename

140792

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2809837