Title :
Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers
Author :
Ishikawa, M. ; Nishikawa, Y. ; Saito, S. ; Onomura, M. ; Parbrook, P.J. ; Nitta, K. ; Rennie, J. ; Hatakoshi, G.
Author_Institution :
Mater. Devices Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them
Keywords :
II-VI semiconductors; chemical vapour deposition; reduction (chemical); semiconductor growth; semiconductor lasers; substrates; valence bands; zinc compounds; CdZnSe; GaAs; InGaAlP; InGaAlP band offset reduction layers; ZnSe; ZnSe-based blue-green laser diodes; ZnSe/CdZnSe blue-green lasers; excess voltage drop; high concentration p-type ZnSe layers; large valence band offset; low voltage carrier injection; low voltage current injection; p-type GaAs substrate; p-type GaAs substrates; p-type ZnSe layer; Current density; Current measurement; Diode lasers; Doping profiles; Electrons; Gallium arsenide; Low voltage; Nitrogen; Voltage measurement; Zinc compounds;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519333
