Low voltage carrier injection in ZnSe-based blue-green laser diodes on p-type GaAs substrates with InGaAlP band offset reduction layers

Author

Ishikawa, M. ; Nishikawa, Y. ; Saito, S. ; Onomura, M. ; Parbrook, P.J. ; Nitta, K. ; Rennie, J. ; Hatakoshi, G.

Author_Institution

Mater. Devices Lab., Toshiba Corp., Kawasaki, Japan

fYear

1994

fDate

19-23 Sep 1994

Firstpage

199

Lastpage

200

Abstract

Summary form only given. A low voltage current injection is demonstrated theoretically and experimentally for ZnSe/CdZnSe blue-green lasers. Insertion of InGaAlP layers reduce the excess voltage drop, due to the large valence band offset between the p-type GaAs substrate and p-type ZnSe layer. The InGaAlP layers are also useful as high concentration p-type ZnSe layers can be grown on them

Keywords

II-VI semiconductors; chemical vapour deposition; reduction (chemical); semiconductor growth; semiconductor lasers; substrates; valence bands; zinc compounds; CdZnSe; GaAs; InGaAlP; InGaAlP band offset reduction layers; ZnSe; ZnSe-based blue-green laser diodes; ZnSe/CdZnSe blue-green lasers; excess voltage drop; high concentration p-type ZnSe layers; large valence band offset; low voltage carrier injection; low voltage current injection; p-type GaAs substrate; p-type GaAs substrates; p-type ZnSe layer; Current density; Current measurement; Diode lasers; Doping profiles; Electrons; Gallium arsenide; Low voltage; Nitrogen; Voltage measurement; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519333

Filename

519333