Title :
A robust small signal modeling of GaAs MESFETs
Author :
Mokari, M.E. ; Tan, T.H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Ohio Univ., Athens, OH, USA
Abstract :
The authors have developed a robust parameter extraction technique based on optimization and explicit relations for intrinsic parameters. This technique improves the accuracy of extrinsic parameter values leading to reliable and consistent intrinsic parameters. The robustness of the procedure is mainly due to the fact that the intrinsic parameters should not vary with frequency which is expected from the device physics
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; MESFETs; explicit relations; intrinsic parameters; optimization; robust modelling; robust parameter extraction technique; small signal modeling; Electrical resistance measurement; Equivalent circuits; Frequency estimation; Frequency measurement; Gallium arsenide; Integrated circuit modeling; MESFETs; Microwave measurements; Robustness; Scattering parameters;
Conference_Titel :
Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on
Conference_Location :
Calgary, Alta.
Print_ISBN :
0-7803-0081-5
DOI :
10.1109/MWSCAS.1990.140794
