A robust small signal modeling of GaAs MESFETs

Author

Mokari, M.E. ; Tan, T.H.

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio Univ., Athens, OH, USA

fYear

1990

fDate

12-14 Aug 1990

Firstpage

617

Abstract

The authors have developed a robust parameter extraction technique based on optimization and explicit relations for intrinsic parameters. This technique improves the accuracy of extrinsic parameter values leading to reliable and consistent intrinsic parameters. The robustness of the procedure is mainly due to the fact that the intrinsic parameters should not vary with frequency which is expected from the device physics

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; solid-state microwave devices; GaAs; MESFETs; explicit relations; intrinsic parameters; optimization; robust modelling; robust parameter extraction technique; small signal modeling; Electrical resistance measurement; Equivalent circuits; Frequency estimation; Frequency measurement; Gallium arsenide; Integrated circuit modeling; MESFETs; Microwave measurements; Robustness; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on

Conference_Location

Calgary, Alta.

Print_ISBN

0-7803-0081-5

Type

conf

DOI

10.1109/MWSCAS.1990.140794

Filename

140794

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2809910