DocumentCode
2810355
Title
Fractional Sigma-Delta Modulator in SiGe
Author
Sobot, Robert ; Stapleton, Shawn ; Syrzycki, Marek
Author_Institution
Univ. of Western Ontario, London
fYear
2007
fDate
22-26 April 2007
Firstpage
530
Lastpage
533
Abstract
This paper presents a fourth-order tunable continuous time (CT) bandpass (BP) sigma-delta modulator with fractional delays (fSigmaDelta) fabricated in 0.5 mum/fT = 47 GHz SiGe technology. The modulator is a fully differential gm-C based circuit powered from from a 3.3 V supply and occupies 2.3 mm times 2.3 mm. At sampling rates from fs = 600 MHz to fs = 1.2 GHz and a single-tone input signal, within a bandwidth of BW = 20 kHz, the modulator demonstrates maximal SNR = 50 dB and maximal dynamic range DR = 47 dB. The center frequency notch of the noise transfer function (NTF) is tunable from 185 MHz to 289 MHz, while the resonator itself can achieve 60 MHz to 295 MHz. This prototype design experimentally confirms validity of the suggested analytical models and design methodology.
Keywords
Ge-Si alloys; band-pass filters; continuous time filters; sigma-delta modulation; SiGe; continuous time bandpass sigma-delta modulator; fourth-order tunable CT BP sigma-delta modulator; fractional delays; frequency 47 GHz; size 0.5 mum; Bandwidth; Delay effects; Delta-sigma modulation; Dynamic range; Frequency; Germanium silicon alloys; Sampling methods; Signal to noise ratio; Silicon germanium; Tunable circuits and devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 2007. CCECE 2007. Canadian Conference on
Conference_Location
Vancouver, BC
ISSN
0840-7789
Print_ISBN
1-4244-1020-7
Electronic_ISBN
0840-7789
Type
conf
DOI
10.1109/CCECE.2007.138
Filename
4232797
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