DocumentCode :
2810355
Title :
Fractional Sigma-Delta Modulator in SiGe
Author :
Sobot, Robert ; Stapleton, Shawn ; Syrzycki, Marek
Author_Institution :
Univ. of Western Ontario, London
fYear :
2007
fDate :
22-26 April 2007
Firstpage :
530
Lastpage :
533
Abstract :
This paper presents a fourth-order tunable continuous time (CT) bandpass (BP) sigma-delta modulator with fractional delays (fSigmaDelta) fabricated in 0.5 mum/fT = 47 GHz SiGe technology. The modulator is a fully differential gm-C based circuit powered from from a 3.3 V supply and occupies 2.3 mm times 2.3 mm. At sampling rates from fs = 600 MHz to fs = 1.2 GHz and a single-tone input signal, within a bandwidth of BW = 20 kHz, the modulator demonstrates maximal SNR = 50 dB and maximal dynamic range DR = 47 dB. The center frequency notch of the noise transfer function (NTF) is tunable from 185 MHz to 289 MHz, while the resonator itself can achieve 60 MHz to 295 MHz. This prototype design experimentally confirms validity of the suggested analytical models and design methodology.
Keywords :
Ge-Si alloys; band-pass filters; continuous time filters; sigma-delta modulation; SiGe; continuous time bandpass sigma-delta modulator; fourth-order tunable CT BP sigma-delta modulator; fractional delays; frequency 47 GHz; size 0.5 mum; Bandwidth; Delay effects; Delta-sigma modulation; Dynamic range; Frequency; Germanium silicon alloys; Sampling methods; Signal to noise ratio; Silicon germanium; Tunable circuits and devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2007. CCECE 2007. Canadian Conference on
Conference_Location :
Vancouver, BC
ISSN :
0840-7789
Print_ISBN :
1-4244-1020-7
Electronic_ISBN :
0840-7789
Type :
conf
DOI :
10.1109/CCECE.2007.138
Filename :
4232797
Link To Document :
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